2026-10-08 合肥物質科学研究院（HFIPS）
(a) In bulk materials, dimensionality is fixed by the crystal structure, whereas thin films allow flexible tuning of dimensionality through epitaxial growth. (b) Flowchart of the high-pressure strategy for freestanding films. (Image by CHEN Jingxin)
＜関連情報＞
- https://english.hf.cas.cn/nr/rn/202610/t20261008_1201760.html
- https://link.springer.com/article/10.1007/s11433-026-3115-4
多次元にわたる自立型イリジウム酸化物における電気伝導の高圧チューニング High-pressure tuning of electrical transport in freestanding iridates across dimensions
Jingxin Chen, Xiang Huang, Zhihan Qiao, Yuqiang Liu, Jiao Li, Yuxiang Gao, Jiahao Xu, Haiyang Zhang, Deyang Li, Enyang Men, Hangtian Wang, Han Zhang, Jianyu Xie, Guolin Zheng, Yizhou Liu, Ning Hao, Xiaoping Yang, Mingliang Tian, Qun Niu & Lin Hao
Science China Physics,Mechanics & Astronomy Published:23 September 2026
DOI:https://doi.org/10.1007/s11433-026-3115-4
Abstract
Flexible control of crystalline dimensionality and pressure is highly desirable for discovering emergent phenomena but has rarely been achieved within a single oxide. Here we develop a high-pressure strategy that enables pressure to be applied to most freestanding oxide thin films. Using this approach, we uncover a pressure-driven semimetal-insulator-metal transition in three-dimensional iridates and a pressure-robust insulating state in the two-dimensional limit. First-principles calculations reveal that the contrasting pressure responses arise from fundamentally different pressure evolutions of the effective electron correlation. While the correlation strength decreases systematically with pressure in two dimensions, it evolves nonmonotonically in three dimensions, first increasing and then decreasing under compression. Our work opens new opportunities to explore dimensionality effects in the pressure response of quantum materials.
