2026-10-01 東京大学
2インチウエハー上に作製した単層BCNトランジスタアレイと素子構造
＜関連情報＞
- https://www.t.u-tokyo.ac.jp/press/pr2026-10-01-001
- https://www.nature.com/articles/s41586-026-11047-9
高移動度p型窒化ホウ素炭素のウェハスケールエピタキシャル成長 Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride
Chien-Chih Tseng, Chang-Hsun Huang, Jui-Cheng Kao, Jui-Han Fu, Aowen Li, Ryo Ishikawa, Seong Rae Cho, Chenxi Lei, Kai Qi, Chih-Zong Deng, Po-Yu Yang, Cheng-Tang Pan, Wei-Chun Chen, Ming-Chung Wu, Fong-Zhi Chen, Yu-Wei Lin, Yu-Chieh Lo, Ya-Lun Ho, Kosuke Nagashio, Yi-Chia Chou, Naoya Shibata, Chun-Wei Pao (包 淳偉) & Vincent Tung
Nature Published:30 September 2026
DOI:https://doi.org/10.1038/s41586-026-11047-9
Abstract
A long-standing bottleneck in realizing two-dimensional (2D) CMOS technology lies in the lack of high-performance p-type semiconductors1,2,3,4. Strong electron-doping tendencies, orbital localization and pronounced hole scattering have collectively impeded the development of stable, efficient p-type 2D materials. Here we report the epitaxy growth of boron carbon nitride (BCN) as a high-performance p-type semiconductor. By engineering the dehydrogenation and surface reaction pathways of monomethyl ammonia borane (MMAB) and ammonia borane (AB), we overcome a crucial barrier: the spatial and temporal mismatch in the delivery of boron (B), carbon (C) and nitrogen (N) atoms, which disrupts lattice uniformity. The result is a wafer-scale, monolayer 2D BCN in which C atoms and dimers primarily substitute for N sites within a continuously crystallized, locally distorted boron nitride lattice, leading to a sizable bandgap of 1.90 eV. Wafer-scale arrays of p-type BCN FETs exhibit benchmark performance, with a field-effect hole mobility of 100 cm2 V−1 s−1, on-current >0.9 mA μm−1, on–off ratio of 108 and threshold voltage of −0.45 V, surpassing current state-of-the-art p-type 2D semiconductors. Our findings establish BCN as a scalable and stable p-type platform, bridging a critical gap in the materials palette for three-dimensional monolithic integration of complementary electronics.
