第一線の専門家が、新しいトランジスタの性能を評価するためのガイドラインを提案(Leading Experts Suggest Guidelines for Assessing Emerging Transistor Performance)

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NISTと世界の共同研究者は、スマートフォンや先端エレクトロニクス向けの次世代電界効果デバイスを測定・評価する普遍的な方法を提案します。 NIST, global collaborators propose universal ways to measure and evaluate next-generation field-effect devices for smartphones and advanced electronics.

2022-07-29 アメリカ国立標準技術研究所(NIST)

この論文では、電界効果トランジスタの新しい設計に不可欠な8つの主要パラメータのそれぞれを評価・記述するための具体的な基準が示されています。

<関連情報>

新興電界効果トランジスタのレポートとベンチマークの方法 How to report and benchmark emerging field-effect transistors

Zhihui Cheng,Chin-Sheng Pang,Peiqi Wang,Son T. Le,Yanqing Wu,Davood Shahrjerdi,Iuliana Radu,Max C. Lemme,Lian-Mao Peng,Xiangfeng Duan,Zhihong Chen,Joerg Appenzeller,Steven J. Koester,Eric Pop,Aaron D. Franklin &Curt A. Richter
Nature Electronics  Published:29 July 2022
DOI:https://doi.org/10.1038/s41928-022-00798-8

Abstract

The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way.

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