2022-06-02 オークリッジ国立研究所(ORNL)
Collaborators at ORNL’s Center for Nanophase Materials Sciences used advanced microscopy to enhance materials for next-generation devices. Credit: Adam Malin/ORNL, U.S. Dept. of Energy
ORNLナノフェーズ材料科学センターの研究チームは、ヘリウムイオンの集束ビームを適用して金属酸化物薄膜の強誘電性を局所的に調整し、トランジスタやメモリに有用な特性を向上させました。
Science誌に掲載された結果は、光イオン顕微鏡がいかに材料のユニークな機能性を引き出し、将来のデバイスを設計するための新しい道筋を作ることができるかを示しています。
＜関連情報＞
- https://www.ornl.gov/news/microscopy-beyond-moores-law
- https://www.science.org/doi/10.1126/science.abk3195
HfO2系強誘電体薄膜における光イオン衝撃による強誘電性の高次化 Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
SEUNGHUN KANG,WOO-SUNG JANG,ANNA N. MOROZOVSKA,OWOONG KWON,YEONGROK JIN ,YOUNG-HOON KIM,HAGYOUL BAE,CHENXI WANG,SANG-HYEOK YANG,ALEX BELIANINOV,STEVEN RANDOLPH,EUGENE A. ELISEEV,LIAM COLLINS,YEEHYUN PARK,SANGHYUN JO.MIN-HYOUNG JUNG ,KYOUNG-JUNE GO ,HAE WON CHO,SI-YOUNG CHOI,JAE HYUCK JANG,SUNKOOK KIM ,HU YOUNG JEONG,JAEKWANG LEE,OLGA S. OVCHINNIKOVA,JINSEONG HEO,SERGEI V. KALININ ,YOUNG-MIN KIM AND YUNSEOK KIM
Science Published:12 May 2022
DOI: 10.1126/science.abk3195
Abstract
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO2)–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.
