二次元材料の量子状態を制御する層スライド戦略を開発(Researchers Develop Layer-Sliding Strategy to Engineer Quantum States in 2D Materials)

2026-07-10 合肥物質科学研究院(HFIPS)

中国科学院合肥物質科学研究院のCAO Liang准教授らの研究チームは、層状二次元材料において原子層の滑り(層間スライド)を精密に制御することで、量子状態を自在に設計・制御する新しい手法を開発した。研究では、ファンデルワールス材料である1T-TaS2を対象に、層の積層配置を調整して周期的な超格子(スーパーラティス)構造を形成し、絶縁状態を異なる電子相へ切り替えられることを実証した。さらに、層間スライドと原子再配列を組み合わせることで結晶相転移を誘起し、異なる電子相を規則的に配置したヘテロ相超格子を作製、その結果として特徴的な超伝導状態が発現することを明らかにした。研究チームは、積層順序を物性設計のための「構造コード」と位置付け、原子層配置を制御することで電子状態や超格子構造を自在に設計できる可能性を示した。本成果は、層状量子材料の構造工学に新たな指針を与え、将来の量子デバイス開発への応用が期待される。

二次元材料の量子状態を制御する層スライド戦略を開発(Researchers Develop Layer-Sliding Strategy to Engineer Quantum States in 2D Materials)
Schematic illustrations of programmable superlattices (Image by CAO Liang)

<関連情報>

層分解型1T-1H変換による TaS₂ における自己適応型ヘテロ相超格子 Self-adaptive hetero-phase superlattices in TaS2 via layer-resolved 1T-to-1H transformations

Zhenyu Ding,Yihao Wang,Rui Li,Jingjing Gao,Jialiang Jiang,Jin Tang,Yuyan Han,Qian Xu,Junfa Zhu,Wenqian Tu,…
National Science Review  Published:28 April 2026
DOI:https://doi.org/10.1093/nsr/nwag246

ABSTRACT

Artificial hetero-phase superlattices constructed from transition metal dichalcogenides (TMDs) provide a powerful platform for exploring exotic physical phenomena and delivering structurally robust devices. However, achieving deterministic control over phase-stacking sequences in bulk architectures remains a significant challenge. Here, we report a self-adaptive superlattice system formed in TaS2 crystals through an in-situ structural phase transition. Coordinated inter-layer sliding and intra-layer S-plane sliding drive layer-resolved 1T-to-1H transformations. This two-dimensional transformation pathway enables deterministic and dynamic engineering of hetero-phase sequences within a three-dimensional (3D) crystal, with the resulting interfaces stabilized by persistent inter-phase coupling. Within these reconfigurable superlattices, we identify two distinct superconducting states arising from paired 1H/1T bilayers and sandwiched 1H/1T/1H’ trilayers. The charge density wave order remaining in the 1T layer suppresses superconductivity in the 1H/1T superlattice. Our findings establish an insitu, sequence-controllable phase engineering strategy for constructing bulk TMD hetero-phase homostructures and highlight stacking configuration as a powerful degree of freedom for designing TMD-based quantum materials and devices.

 

1T-TaS₂結晶における二重絶縁体状態 Dualistic insulator states in 1T-TaS2 crystals

Yihao Wang,Zhihao Li,Xuan Luo,Jingjing Gao,Yuyan Han,Jialiang Jiang,Jin Tang,Huanxin Ju,Tongrui Li,Run Lv,Shengtao Cui,Yingguo Yang,Yuping Sun,Junfa Zhu,Xingyu Gao,Wenjian Lu,Zhe Sun,Hai Xu,Yimin Xiong & Liang Cao
Nature Communications  Published:23 April 2024
DOI:https://doi.org/10.1038/s41467-024-47728-0

Abstract

While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS2 crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS2 crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a “three-dimensional” control for the era of slidetronics.

1701物理及び化学
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