深宇宙探査向け高耐放射線NANDフラッシュ技術を開発（Georgia Tech Researchers Discover New Form of NAND Flash Data Storage for Deep Space Missions）

2026-05-18 ジョージア工科大学

＜関連情報＞

• https://research.gatech.edu/georgia-tech-researchers-discover-new-form-nand-flash-data-storage-deep-space-missions
• https://pubs.acs.org/doi/10.1021/acs.nanolett.5c05947

積層型強誘電体スタックを利用した固体NANDストレージの耐放射線性向上 Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack

Lance Fernandes,Stuart Wodzro,Prasanna Venkatesan,Priyankka Ravikumar,Ming-Yen Lee,Minji Shon,Dyutimoy Chakraborty,Taeyoung Song,Sanghyun Kang,Salma Soliman,Mengkun Tian,Jason Yeager,Jackson Adler,Jiayi Chen,Zekai Wang,Douglas Wolfe,Shimeng Yu,Andrea Padovani,Suman Datta,Biswajit Ray,and Asif Khan
Nano Letters  Published: March 5, 2026
DOI:https://doi.org/10.1021/acs.nanolett.5c05947

Abstract

NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage (V_th) degradation under ionizing radiation, causing reliability challenges for space and defense applications. Here we show that ferroelectric field-effect transistors (FeFETs) with laminated gate stacks offer a promising route to achieving radiation resilience in vertical NAND technology. We demonstrate that large-memory-window, vertical NAND-compatible laminated poly-silicon-channel FeFETs with an 8 nm Hf_0.5Zr_0.5O₂/3 nm Al₂O₃/8 nm Hf_0.5Zr_0.5O₂ stack retain a full memory window and robust switching up to 10 Mrad(air) of the total ionizing dose (TID). Programmed and erased states show negligible TID-induced drift after 1 Mrad(air), while only the erased state degrades by ∼2 V at 10 Mrad(air). Technology computer-aided design (TCAD) modeling attributes these asymmetric shifts to state-dependent traps. Compared to charge-trap NAND, laminated FeFETs exhibit ∼30-fold lower V_th degradation per unit dose, positioning them as superior radiation-resilient storage candidates.