2026-10-29 アルゴンヌ国立研究所（ANL）
Argonne has helped in developing a new process that tailors the crystallization of perovskite in a way that gives researchers more control over how they assemble. Here, crystals in a perovskite film melt and reorganize into a more uniform structure. (Image: Science, adapted by Argonne National Laboratory)
＜関連情報＞
- https://www.anl.gov/article/argonne-improves-perovskite-crystal-growth-for-nextgeneration-optoelectronics
- https://www.science.org/doi/10.1126/science.aeb4554
ペロブスカイト光電子デバイス向け結晶化を最適化するための揮発性共晶 Volatile eutectics to tailor crystallization for perovskite optoelectronics
Jason J. Yoo, Connor J. Dolan, Seongsik Nam, Jinho Lee, Kyu Min Kang, Bong Joo Kang, Rushik Desai, Niranjana Mohan Kumar, Arkita Chakrabarti, […] , and Seong Sik Shin
Science Published:8 Oct 2026
DOI:https://doi.org/10.1126/science.aeb4554
Abstract
Improvements to the radiative efficiency of halide perovskite thin films are necessary to approach fundamental solar cell performance limits. We tailored perovskite crystallization by leveraging the eutectic interaction between zinc bromide and methylammonium chloride additives. The resulting films had high photoluminescence quantum yield and charge carrier decay times and low surface recombination velocity. Nanoprobe x-ray microscopy revealed local melting of the eutectic at grain boundaries during annealing that reduced intragranular structural defect density. Annealing also homogenized the halide distribution and caused zinc segregation to grain boundaries. Solar cells fabricated with the volatile eutectic reached 26.5% power conversion efficiency (PCE, certified 25.9%), and perovskite minimodules (areas more than 15 square centimeters) had 23.9% PCE. Small-area cells with a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] hole transporter retained 85.8% of their initial 24.1% PCE after 1400 hours of continuous operation at 85°C. Furthermore, this approach enables 26.1% external quantum efficiency as light-emitting diodes.
