半導体内部の電子をこれまでにない詳細で観察(A New Close-Up View of Electrons Inside Semiconductors)

2026-09-17 ローレンス・バークレー国立研究所(LBNL)

ローレンス・バークレー国立研究所(Berkeley Lab)主導の研究チームは、2次元半導体内部の電子と欠陥の相互作用を、これまでより直接的かつ高い空間分解能で観察する手法を開発した。モリブデン二セレン化物(MoSe₂)を用いた極薄半導体を走査トンネル顕微鏡で観察し、欠陥密度の違いによって電子の状態が大きく変化することを明らかにした。欠陥が多い場合、電子は強く相互作用する「ウィグナー固体」状態で不規則に固定され、欠陥が少ない場合にはより規則的な結晶状配列を形成し、フェルミ液体状態へ移行しやすくなった。さらに量子モンテカルロ法によるシミュレーションが実験像とよく一致し、観測された現象の理論的説明を裏付けた。欠陥の種類・配置を制御することが、将来の超小型半導体デバイスやセンサーの設計で重要になる可能性が示された。

半導体内部の電子をこれまでにない詳細で観察(A New Close-Up View of Electrons Inside Semiconductors)
The experimental image on the left is a scanning tunnelling microscope image of the research team’s 2D semiconductor device.  (Credit: Berkeley Lab)

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2次元電子ウィグナー固体における急冷された無秩序の影響の可視化 Visualizing the impact of quenched disorder on 2D electron Wigner solids

Zhehao Ge, Conor Smith, Zehao He, Yubo Yang, Qize Li, Ha-Leem Kim, Ziyu Xiang, Jianghan Xiao, Wenjie Zhou, Salman Kahn, Aining Hu, Melike Erdi, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Seth Ariel Tongay, Miguel A. Morales, Shiwei Zhang, Feng Wang & Michael F. Crommie
Nature  Published:17 June 2026
DOI:https://doi.org/10.1038/s41586-026-10654-w

Abstract

Electron Wigner solids (WSs)1,2,3,4,5,6,7,8,9,10,11,12 provide an ideal system for understanding the competing effects of electron–electron and electron–disorder interactions, a central unsolved problem in condensed matter physics. Progress in this topic has been limited by a lack of single-defect-resolved experimental measurements as well as accurate theoretical tools to enable realistic experiment/theory comparison. Here we overcome these limitations by combining atomically resolved scanning tunnelling microscopy (STM) with neural-quantum-state quantum Monte Carlo (NQS-QMC) simulation of disordered 2D electron WSs to discover new disorder-induced physical regimes of correlated electron behaviour. STM was used to image the electron density (ne)-dependent evolution of electron WSs in gate-tunable bilayer MoSe2 (BL-MoSe2) devices with varying long-range (nLR) and short-range (nSR) disorder densities. These images were compared with NQS-QMC simulations using realistic disorder maps extracted from experiment, thus allowing the roles of different disorder types to be disentangled. We identify two distinct physical regimes for disordered electron WSs that depend on nSR. For nSR ≲ ne, the WS behaviour is dominated by long-range disorder and features extensive mixed solid–liquid phases, a new type of local re-entrant melting/crystallization and prominent Friedel oscillations. By contrast, when nSR ≫ ne, these features are suppressed and a more robust amorphous WS phase emerges that persists to higher ne, highlighting the importance of short-range disorder in this regime. Our work establishes a powerful framework for studying disordered quantum solids through a combined experimental–theoretical approach.

0403電子応用
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