かつて考えられなかったナノ結晶の作成を可能にする量子ブレークスルー(Quantum Breakthrough Allows Researchers To Create “Previously Unimaginable Nanocrystals”)

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2024-11-27 シカゴ大学

Molten Salt Quantum Dots

Colloidal solutions of gallium arsenide quantum dots of the type used in lasers, TVs, solar cells, medical devices, and other electronics glow under UV light. These were grown using a groundbreaking technique developed by UChicago’s Talapin Lab, a technique that opens a new world of materials for researchers growing nanocrystals. Credit: Courtesy of the University of Chicago/Talapin Lab

シカゴ大学を中心とする研究チームは、従来の有機溶媒の代わりに高温の溶融塩を用いることで、新たなナノ結晶の合成に成功しました。この手法により、これまで合成が困難だったIII-V族元素からなる量子ドットの作製が可能となり、太陽電池やLED、半導体レーザーなどの性能向上が期待されています。特に、溶融塩は高温に耐えられるため、高温が必要な材料の合成に適しています。この研究は、ナノテクノロジーの新たな可能性を開くものとして注目されています。

<関連情報>

溶融無機塩の還元経路により、III-V半導体ナノ結晶のコロイド合成が可能に Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals

Justin C. Ondry, Zirui Zhou, Kailai Lin, Aritrajit Gupta, Jun Hyuk Chang, Haoqi Wu, Ahhyun Jeong, Benjamin F. Hammel, Di Wang, […], and Dmitri V. Talapin +5 authorsAuthors Info & Affiliations
Science 24 Oct 2024 Vol 386, Issue 6720 pp. 401-407
DOI: 10.1126/science.ado7088

Editor’s summary

Members of the III-V semiconductor family, ranging from binary species such as gallium phosphide (GaP) and gallium arsenide (GaAs) up to pentanary compositions, can now be grown as monodisperse nanoparticles in eutectic melts of inorganic salts. Ondry et al. found that a wider range of semiconductors could be made if, instead of Ga(III), a weaker oxidizing species, Ga[GaI4], was used in the redox reactions. This approach allowed higher reaction temperatures that enabled synthesis of GaAs nanoparticles that showed band-edge photoluminescence. —Phil Szuromi

Abstract

Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III–group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. We directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425°C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.

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