高品質な六方晶窒化ホウ素をウェーハスケールで単層で製造する方法を初めて発見 Study uncovers first method for producing high-quality, wafer-scale, single-layer hexagonal boron nitride
2022-04-14 ミシガン大学
Ping Wang, a postdoctoral researcher in electrical engineering and computer science, checks the monolayer hexagonal boron nitride/graphene samples grown by an ultrahigh temperature MBE system. Image credit: Brenda Ahearn
このプロセスは、広く用いられている分子線エピタキシー法で高品質のhBNを大量に生産することができ、『Advanced Materials』誌にその詳細が報告されている。
グラフェン-hBN構造は、現在のLEDでは不可能な深紫外光を発生させるLEDを駆動することができると、U-M大学電気工学・コンピューターサイエンス学科のZetian Mi教授（本研究の責任著者）は語っている。深紫外LEDは、レーザーや空気清浄機など、さまざまな機器の小型化・高効率化を促進する可能性があります。
＜関連情報＞
- https://news.umich.edu/graphene-hbn-breakthrough-to-spur-new-leds-quantum-computing/
- https://onlinelibrary.wiley.com/doi/10.1002/adma.202201387
巨大バンドギャップ繰り込みによるグラフェン上単層六方晶窒化ホウ素のスケーラブル合成 Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization
Ping Wang,Woncheol Lee,Joseph P. Corbett,William H. Koll,Nguyen M. Vu,David Arto Laleyan,Qiannan Wen,Yuanpeng Wu,Ayush Pandey,Jiseok Gim,Ding Wang,Diana Y. Qiu,Robert Hovden,Mackillo Kira,John T. Heron,Jay A. Gupta,Emmanouil Kioupakis,Zetian Mi
Advanced Materials First published: 30 March 2022
https://doi.org/10.1002/adma.202201387
Abstract
Monolayer hexagonal boron nitride (hBN) has been widely considered as a fundamental building block for two–dimensional (2D) heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, we propose and further demonstrate a hBN/graphene (hBN/G) interface–mediated growth process for the controlled synthesis of high–quality monolayer hBN. We discover that the in–plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single–domain hBN, aligned to the underlying graphene lattice. Furthermore, we identify that the deep–ultraviolet emission at 6.12 eV stems from the 1s–exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer–scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.
