2025-09-20 東京大学,物質・材料研究機構,岡山大学,科学技術振興機構
Web要約 の発言：
開発されたUHF帯で動作する高効率な有機ダイオード
＜関連情報＞
- https://www.k.u-tokyo.ac.jp/information/category/press/11752.html
- https://www.k.u-tokyo.ac.jp/information/upload/2f71c77f039326eb95d96624f0de14f71a58da5a.pdf
- https://www.science.org/doi/10.1126/sciadv.adv9952
単層厚のイオン化ドナーによって実現された高分子マイクロ波整流器 Polymeric microwave rectifiers enabled by monolayer-thick ionized donors
Nobutaka Osakabe, Jeongeun Her, Takahiro Kaneta, Akiko Tajima, […] , and Yu Yamashita
Science Advances Published:19 Sep 2025
DOI:https://doi.org/10.1126/sciadv.adv9952
Abstract
Solution processing of polymeric semiconductors provides a facile way to fabricate functional diodes. However, energy barriers at metal-semiconductor interfaces often limit their performance. Here, we report rectifying polymer diodes with markedly modified energy-level alignments. The gold electrode surface was treated with a dimeric metal complex, which resulted in a shallow work function of 3.7 eV by forming a monolayer-thick ionized donor layer. When a polymeric semiconductor was coated on the treated electrode, most of the ionized donors remained at the metal-semiconductor interface. The confined ionized donors with the ideal thickness enabled fabrication of a polymer diode with a forward current density of over 100 A cm−2. Furthermore, a power conversion efficiency of 7.9% was observed for rectification at a microwave frequency of 920 MHz, which is orders of magnitude higher than that reported for organic diodes. Our findings will pave a way to solution-processed high-frequency and high-power devices.
