2022-03-15 サンディア国立研究所(SNL)
サンディア国立研究所の科学者は、記録的な6,400ボルトで動作しながら、数十億分の1秒以内に過剰な電気を遮断できる小型の電子デバイスを発表しました。
＜関連情報＞
ステップエッチングされた接合終端拡張を備えた大面積垂直GaNpnダイオードにおける>6.0kVの絶縁破壊電圧の実証 Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
Luke Yates; Brendan P. Gunning; Mary H. Crawford; Jeffrey Steinfeldt; Michael L. Smith; Vincent M. Abate; Jeramy R. Dick
Published in: IEEE Transactions on Electron Devices ( Early Access )Page(s): 1 – 7
Abstract:
Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm²) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ · cm² differential specific on-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm²) that is capable of 6.4-kV breakdown with a differential specific on-resistance of 10.2 mΩ · cm², when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm² diode with a room temperature breakdown of 5.6 kV. These results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1 x 10¹⁵ cm⁻³ and a carefully designed four-zone junction termination extension.
