記録的な超高速デバイスが、電磁パルスから送電網を守る一歩に(Record-breaking, ultrafast devices step to protecting the grid from EMPs)

2022-03-15 サンディア国立研究所(SNL)

＜関連情報＞

• https://newsreleases.sandia.gov/emp_devices/
• https://ieeexplore.ieee.org/document/9732899

ステップエッチングされた接合終端拡張を備えた大面積垂直GaNpnダイオードにおける>6.0kVの絶縁破壊電圧の実証 Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Luke Yates; Brendan P. Gunning; Mary H. Crawford; Jeffrey Steinfeldt; Michael L. Smith; Vincent M. Abate; Jeramy R. Dick

Published in: IEEE Transactions on Electron Devices ( Early Access )Page(s): 1 – 7

DOI: 10.1109/TED.2022.3154665

Abstract:

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm²) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ · cm² differential specific on-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm²) that is capable of 6.4-kV breakdown with a differential specific on-resistance of 10.2 mΩ · cm², when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm² diode with a room temperature breakdown of 5.6 kV. These results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1 x 10¹⁵ cm⁻³ and a carefully designed four-zone junction termination extension.