半導体材料の隠れた「驚くべき」活性を研究者が発見(‘Surprising’ hidden activity of semiconductor material spotted by researchers)

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2024-04-03 ペンシルベニア州立大学(PennState)

最新の研究で、コンピュータチップの設計において見過ごされがちな材料が、情報処理に重要な役割を果たす可能性があることが示唆された。ペンシルベニア州立大学の研究者らは、セミコンダクターチップの基板が、その上にある半導体と同様に電気の変化に反応することを発見した。これは、将来の材料やデバイスの設計において、基板がセミコンダクター処理に積極的な役割を果たす可能性を示している。

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絶縁体から金属への転移における膜-基板結合エラストダイナミクスの時空間インオペアランドイメージング In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition

Greg Stone, Yin Shi, Matthew Jerry, Vladimir Stoica, Hanjong Paik, Zhonghou Cai, Darrell G. Schlom, Roman Engel-Herbert, Suman Datta, Haidan Wen, Long-Qing Chen, Venkatraman Gopalan
Advanced Materials  Published: 05 March 2024
DOI:https://doi.org/10.1002/adma.202312673

Details are in the caption following the image

Abstract

The drive toward non-von Neumann device architectures has led to an intense focus on insulator-to-metal (IMT) and the converse metal-to-insulator (MIT) transitions. Studies of electric field-driven IMT in the prototypical VO2 thin-film channel devices are largely focused on the electrical and elastic responses of the films, but the response of the corresponding TiO2 substrate is often overlooked, since it is nominally expected to be electrically passive and elastically rigid. Here, in-operando spatiotemporal imaging of the coupled elastodynamics using X-ray diffraction microscopy of a VO2 film channel device on TiO2 substrate reveals two new surprises. First, the film channel bulges during the IMT, the opposite of the expected shrinking in the film undergoing IMT. Second, a microns thick proximal layer in the substrate also coherently bulges accompanying the IMT in the film, which is completely unexpected. Phase-field simulations of coupled IMT, oxygen vacancy electronic dynamics, and electronic carrier diffusion incorporating thermal and strain effects suggest that the observed elastodynamics can be explained by the known naturally occurring oxygen vacancies that rapidly ionize (and deionize) in concert with the IMT (MIT). Fast electrical-triggering of the IMT via ionizing defects and an active “IMT-like” substrate layer are critical aspects to consider in device applications.

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