原子レベル磁性制御による高速・高性能電子機器開発(How Argonne scientists are paving the way for faster, smarter electronics)

2026-04-08 アルゴンヌ国立研究所(ANL)

アルゴンヌ国立研究所の研究者らは、より高速で高性能な電子機器実現に向けた新材料・新技術を開発している。従来のシリコン半導体の限界を克服するため、量子材料や先端ナノ構造を活用し、電子の移動や情報処理の効率を大幅に向上させる手法を提案した。特に電子の振る舞いを精密に制御することで、低消費電力かつ高速動作を両立する次世代デバイスの可能性が示された。また、これらの研究はAIや高性能計算、通信分野への応用も期待される。半導体技術の革新により、よりスマートで効率的な電子機器の実現に貢献する成果である。

原子レベル磁性制御による高速・高性能電子機器開発(How Argonne scientists are paving the way for faster, smarter electronics)
A graphical representation of the 2D magnet Fe₃GeTe₂ with stepped thickness regions. Under a reversed applied magnetic field (indicated by arrows), distinct magnetic domain patterns emerge as a function of thickness, including stripe domains, patch-like domains and skyrmions. (Image generated by Gemini.)

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磁化反転時のFe3GeTe2における厚さ依存的なスキルミオンの進化 Thickness-Dependent Skyrmion Evolution in Fe3GeTe2 During Magnetization Reversal

Jennifer Garland, John Fullerton, PeiYu Cai, Rabindra Basnet, Santosh Karki Chhetri, Jin Hu, Elton J. G. Santos, Yue Li, Charudatta Phatak, Amanda Petford-Long
Advanced Functional Materials  Published: 24 October 2025
DOI:https://doi.org/10.1002/adfm.202518239

Abstract

The van der Waals (vdW) ferromagnet Fe3−xGeTe2 (FGT) offers a versatile platform for studying 2D magnetism and for potential spintronic applications, owing to its relatively high Curie temperature (200 K to 230 K) and strong perpendicular magnetic anisotropy. Although some efforts at skyrmion control in FGT have been reported, the details of domain behavior during magnetization reversal remain largely unexplored. Here, in situ cryo-Lorentz transmission electron microscopy (LTEM) is used to image the magnetic domain behavior during the field-driven reversal in a single exfoliated FGT flake with stepped thicknesses. The field-cooling conditions are varied to establish the initial domain state, and the evolution of stripe domains, skyrmions, and a faceted, patch-like domain phase formed by 360° domain walls is directly observed. These transitions show a strong dependence on thickness, and naturally occurring step edges between thickness regions act as strong pinning sites. Micromagnetic simulations reproduce the experimental behavior and reveal the role of sample thickness, magnetic anisotropy, and applied field on the resulting domain behavior. This systematic study demonstrates efficient control of skyrmion size, density, and transitions to novel domain structures, offering more precise mechanisms for tailoring topological spin textures.

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