2025-11-03 ミネソタ大学
Web要約 の発言：
Researchers can now design materials where different sections have dramatically different defect densities and types, potentially leading to new functionalities. Photo provided by The Mkhoyan Lab
＜関連情報＞
- https://cse.umn.edu/college/news/engineering-defects-could-transform-future-nanomaterials
- https://www.nature.com/articles/s41467-025-64522-8
ナノスケール基板パターニングによるBaSnO3およびSrSnO3薄膜の欠陥エンジニアリング Defect engineering in BaSnO3 and SrSnO3 thin films through nanoscale substrate patterning
Supriya Ghosh,Fengdeng Liu,Jay Shah,Silu Guo,Mayank Tanwar,Donghwan Kim,Sreejith Nair,Matthew Neurock,Turan Birol,Bharat Jalan & K. Andre Mkhoyan
Nature Communications Published:28 October 2025
DOI:https://doi.org/10.1038/s41467-025-64522-8
Abstract
Creating 1D or 2D extended defects in thin films that propagate throughout the film thickness enables engineering nanoscale materials with anisotropic properties governed by these defects. Performing defect engineering of thin films with location specificity facilitates new nanoscale device architectures that harness the unique properties of these anisotropic extended defects. Here we demonstrate that, by combining Ga focused ion-beam (FIB) exposure and subsequent heat treatment, it is possible to pattern nanoscale structural perturbations on the substrate surface that promote nucleation and propagation of extended defects in thin films epitaxially grown on these substrates. Using SrTiO3 as a substrate for growing perovskite BaSnO3 and SrSnO3 thin films, we demonstrate engineering ultra-high densities of threading 1D dislocations and 2D Ruddlesden-Popper faults with nanometer-level location specificity limited only by the resolution of the patterning Ga ion-beam of the FIB. Given the versatility of this method, it can be applied to different substrates and films, serving as a flexible means of defect-driven material engineering.
