次世代半導体の電場保持メカニズム解明(Advanced microelectronics: Why a next-gen semiconductor doesn’t fall to pieces)

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2025-04-16 ミシガン大学

ミシガン大学の研究チームは、次世代半導体素材「ウルツ鉱型強誘電性窒化物」の開発に成功しました。この素材は、互いに反対の電気分極を同時に保持する特性を持ち、従来の半導体では不安定とされてきた「同じ電荷を持つ領域の境界(ドメイン壁)」を安定に保つ独自の原子構造を有しています。さらに、このドメイン壁は電気的に導電性を持ち、将来的にはトランジスタの電流チャネルとして活用できる可能性があります。この発見により、メモリ、無線通信、MEMS(マイクロ電気機械システム)、量子フォトニクスなど多岐にわたる応用が期待され、持続的な電力供給なしでも状態を保持できることから、省エネ型電子機器の実現にも貢献するとされています。

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ウルツ鉱強誘電体における電界誘起ドメインの壁 Electric-field-induced domain walls in wurtzite ferroelectrics

Ding Wang,Danhao Wang,Mahlet Molla,Yujie Liu,Samuel Yang,Shuaishuai Yuan,Jiangnan Liu,Mingtao Hu,Yuanpeng Wu,Tao Ma,Kai Sun,Hong Guo,Emmanouil Kioupakis & Zetian Mi
Nature  Published:16 April 2025
DOI:https://doi.org/10.1038/s41586-025-08812-7

次世代半導体の電場保持メカニズム解明(Advanced microelectronics: Why a next-gen semiconductor doesn’t fall to pieces)

Abstract

Wurtzite ferroelectrics have transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric characteristics and exploiting their functional properties in practical devices. Despite burgeoning interest, the exact configurations and electronic structures of domain walls in wurtzite ferroelectrics remain elusive. Here we explain the atomic configurations and electronic properties of electric-field-induced domain walls in ferroelectric ScGaN. By combining transmission electron microscopy and theoretical calculations, a charged domain wall with a buckled two-dimensional hexagonal phase is revealed. Density functional theory calculations confirm that such domain-wall structures further give rise to unprecedented mid-gap states within the forbidden band. Quantitative analysis unveils a universal charge-compensation mechanism stabilizing antipolar domain walls in ferroelectric materials, in which the polarization discontinuity at the 180° domain wall is compensated by the unbonded valence electrons. Furthermore, the reconfigurable conductivity of these domain walls is experimentally demonstrated, showcasing their potential for ultrascaled device applications.

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