2025-04-14 東北大学
＜関連情報＞
- https://www.tohoku.ac.jp/japanese/2025/04/press20250414-03-thermal.html
- https://www.tohoku.ac.jp/japanese/newimg/pressimg/tohokuuniv-press20250414_03_thermal.pdf
- https://pubs.acs.org/doi/10.1021/acs.nanolett.5c00646
単結晶基板表面の構造工学的利用によるアモルファスSiOx膜の熱伝導性制御 Controlling Thermal Conductivity of Amorphous SiOx Films through Structural Engineering Utilizing Single Crystal Substrate Surfaces
Katelyn A. Kirchner,Sohei Ogasawara,Melbert Jeem,Hiromichi Ohta,Akihiro Suzuki,Hiroo Tajiri,Tomoyuki Koganezawa,Loku Singgappulige Rosantha Kumara,Junji Nishii,John C. Mauro,Yasutaka Matsuo,Madoka Ono
Nano Letters Published: April 14, 2025
DOI:https://doi.org/10.1021/acs.nanolett.5c00646
Abstract
Development of thin films with low thermal conductivity (κ) and high dielectric breakdown strength is essential to engineer insulating materials for electronics packaging and other application domains, such as power electronics. Silica glass (SiO2) has extremely high dielectric breakdown strength but a relatively high κ compared to multicomponent silicate glasses. This study reveals that a large and systematic decrease in κ can be obtained by shorter intermediate ordering distances controlled by stronger constraints from the substrate surface atoms. The largest effect on κ is observed for SiOx films on Si substrates, which can reach one-third of the bulk value. The change in ordering is observable by the shift of the main halo measured by grazing incidence X-ray total scattering. The improved understanding of the κ of SiOx films presented herein could enable new materials design for electronic devices including wide-bandgap semiconductors.
