有機半導体における電子相関の発達を初めて観測~電子相関発現のメカニズム解明と量子エレクトロニクスの発展に貢献~

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2025-04-14 東京科学大学

東京科学大学、東京大学、筑波大学の研究グループは、有機半導体C₈-DNBDTに高密度の正孔を注入することで、絶縁体から金属への転移後、電子相関効果が発達する様子を世界で初めて観測しました。これにより、従来ハーフフィリング系でしか発現しないと考えられていた電子相関効果が、1/8充填程度の低密度条件でも発現する可能性が示されました。量子エレクトロニクスや高温超伝導など次世代材料研究に新たな視点を提供します。

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高濃度有機二次元ホールガスにおける電子相関の進化 Evolution of electronic correlation in highly doped organic two-dimensional hole gas

Naotaka Kasuya,Tomoki Furukawa,Hiroyuki Ishii,Nobuhiko Kobayashi,Kenji Hirose,Hideaki Takayanagi,Toshihiro Okamoto,Shun Watanabe & Jun Takeya
Nature Communications  Published:10 April 2025
DOI:https://doi.org/10.1038/s41467-025-58215-5

有機半導体における電子相関の発達を初めて観測~電子相関発現のメカニズム解明と量子エレクトロニクスの発展に貢献~

Abstract

Strong electron correlation is the essential mediator that creates various exotic phases in two-dimensional electronic systems which has been continuously intriguing in modern condensed-matter physics. Such electronic states as Mott insulators, charge orders, and high-temperature superconductivity would be simply Fermi-degenerated metals unless the strong correlation plays essential roles. However, how it emerges, particularly to overcome screening effects upon doping band insulators, has not been experimentally studied. In this study, we report evolution of a strongly correlated electron system from a band-insulating organic semiconductor. Carriers are continuously doped via electric double layers up to a density of 1014 cm−2. Notably, significant deviations from a simple metallic system are observed even at far from half-filled band, possibly due to charge-order instability. The findings reveal that off-site Coulomb energy can compete with Thomas–Fermi screening. This competition enables the emergence of strongly correlated exotic phases, even in systems distant from Mott insulators.

0403電子応用
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