2025-05-22 英国・ブリストル大学
.png "6G デリバリーをより強力にする半導体技術のブレイクスルー (Researchers make breakthrough in semiconductor technology set to supercharge 6G delivery)")
An artistic image of a futuristic semiconductor device which will help make 6G technology a reality.
Image credit: University of Bristol
＜関連情報＞
- https://www.bristol.ac.uk/news/2025/may/semiconductor-breakthrough.html
- https://www.nature.com/articles/s41928-025-01391-5
高周波応用向けラッチ誘起サブ60mV/decadeサブスレッショルド勾配を有する窒化ガリウム多チャネルデバイス Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications
Akhil S. Kumar,Stefano Dalcanale,Michael J. Uren,James W. Pomeroy,Matthew D. Smith,Justin A. Parke,Robert S. Howell & Martin Kuball
Nature Electronics Published:22 May 2025
DOI:https://doi.org/10.1038/s41928-025-01391-5
Abstract
Aluminium gallium nitride/gallium nitride (AlGaN/GaN)-based superlattice castellated field-effect transistors are a potential basis for high-power radiofrequency amplifiers and switches in future radars. The reliability of such devices, however, is not well understood. Here we report transistor latching in multichannel GaN transistors. At the latching condition, drain current sharply transits from an off-state value to a high on-state value with a slope less than 60 mV per decade. Current–voltage measurements, simulations and correlated electroluminescent emission at the latching condition indicate that triggering of fin-width-dependent localized impact ionization is responsible for the latching. This localization is attributed to the presence of fin-width variation due to variability in the fabrication process. The latching condition is reversible and non-degrading, and we show that it can lead to improvement in the transconductance characteristics of transistors, implying improved linearity and power in radiofrequency power amplifiers.
