2025-08-20 北海道大学
＜関連情報＞
- https://www.hokudai.ac.jp/news/2025/08/10-16.html
- https://www.hokudai.ac.jp/news/pdf/250820_pr3.pdf
- https://pubs.acs.org/doi/10.1021/acsaelm.5c00829
水酸化インジウムセラミックターゲット：高移動度薄膜トランジスタ技術のブレークスルー Indium Hydroxide Ceramic Targets: A Breakthrough in High-Mobility Thin-Film Transistor Technology
Hikaru Sadahira,Prashant R. Ghediya,Hyeonjun Kong,Akira Miura,Yasutaka Matsuo,Hiromichi Ohta,and Yusaku Magari
ACS Applied Electronic Materials Published: August 3, 2025
DOI:https://doi.org/10.1021/acsaelm.5c00829
Abstract
Thin-film transistors composed of a hydrogen-containing indium oxide active layer are promising candidates for backplane devices in next-generation flat panel displays, offering higher definition and faster operation. However, the hydrogen incorporation process during film deposition poses challenges for scalable and industrial development due to both safety and controllability issues. Here, we demonstrate that using indium hydroxide ceramic as the target material for film deposition overcomes the difficulties associated with hydrogen gas usage. We sintered commercially available indium hydroxide powder using a conventional ceramic process at 150–250 °C in air and utilized it for the deposition of hydrogen-incorporated indium oxide films via pulsed laser deposition. The resulting indium oxide films, after thermal annealing, contained a sufficient concentration of hydrogen and exhibited very high electron mobility due to significantly grown grains. Furthermore, we confirmed that the fabricated thin-film transistors exhibited comparably high performance to those produced using the gas-phase hydrogen incorporation method. This approach offers a practical pathway for hydrogen-containing indium oxide-based thin-film transistors in next-generation flat panel displays.
