ダイヤモンド中の量子特性の正確な活性化に成功(New breakthrough enables precise activation of quantum features in diamond)

2025-06-16 オックスフォード大学

オックスフォード大学などの研究チームは、ダイヤモンド内に量子欠陥「スズ–vacancy色中心」をナノ精度で制御・活性化する新技術を開発。集束イオンビームで単一スズ原子を導入し、超高速レーザーとスペクトルフィードバックにより形成過程をリアルタイム観測。室温下での高精度・拡張性ある製造法を実現し、量子ネットワークや量子通信、量子計算への応用が期待される。成果は『Nature Communications』誌に掲載。

<関連情報>

ダイヤモンドにおける単一IV族色中心のレーザー活性化 Laser activation of single group-IV colour centres in diamond

Xingrui Cheng,Andreas Thurn,Guangzhao Chen,Gareth S. Jones,James E. Bennett,Maddison Coke,Mason Adshead,Cathryn P. Michaels,Osman Balci,Andrea C. Ferrari,Mete Atatüre,Richard J. Curry,Jason M. Smith,Patrick S. Salter & Dorian A. Gangloff
Nature Communications  Published:02 June 2025
DOI:https://doi.org/10.1038/s41467-025-60373-5

ダイヤモンド中の量子特性の正確な活性化に成功(New breakthrough enables precise activation of quantum features in diamond)

Abstract

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realising precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV−) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV− centres. Our in-situ spectral monitoring opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV− centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.

1601コンピュータ工学
ad
ad
Follow
ad
タイトルとURLをコピーしました