2025-04-15 中国科学院（CAS）
Heterogeneous integration of single-crystal SrRuO₃ films on silicon for spin-orbit torque devices with low-power consumption (Image by NIMTE)
＜関連情報＞
- https://english.cas.cn/newsroom/research_news/phys/202504/t20250415_1041290.shtml
- https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202500755
スピントロニクスデバイスのための大きなスピンホール伝導性を持つSrRuO3単結晶薄膜のシリコン上への不均一集積化 Heterogeneous Integration of Single-Crystal SrRuO3 Films with Large Spin Hall Conductivity on Silicon for Spintronic Devices
Zengxing Lu, Xue Bai, Bin Lao, Xuan Zheng, Haoyue Deng, Zhen Fan, Run-Wei Li, Zhiming Wang
Advanced Functional Materials Published: 13 March 2025
DOI:https://doi.org/10.1002/adfm.202500755
Abstract
Spin-orbit torque (SOT) device has been recognized as a promising candidate for next-generation information devices, owing to its energy-efficient, high-speed and scalable potential. Complex oxides show large spin Hall conductivity (σSH), thus are capable of inducing efficient SOT. However, corresponding SOT device integrated on silicon has rarely been reported due to the technical challenges in film preparation. Here, a hybrid transfer and epitaxy strategy for integrating single-crystalline SrRuO3 on silicon buffered with transferred freestanding SrTiO3 membrane is demonstrated. The integrated SrRuO3 exhibits a large σSH of 6.1 × 104 ħ/2e S m−1, enabling magnetization switching in a CoPt layer with an ultra-low critical current density of 1.3 × 1010 A m−2, being lower than heavy metals by 1–2 orders of magnitude. What’s more, this SOT-induced switching displays multiple intermediate magnetization states, which is able to mimic synapse and neuron behavior. Simulating a two-layer artificial neural network using experimentally extracted device parameters achieve an accuracy of 88% for image recognition. The results showcase the successful integration of single-crystalline oxides on silicon, paving the way for high-performance, silicon-compatible spintronic devices.
