この進歩により、研究者は日常的な材料を量子コンピュータで使用するための導体に変えることができるようになる。The advance will allow researchers to transform everyday materials into conductors for use in quantum computers
2024-01-31 カリフォルニア大学校アーバイン校(UCI)
◆彼らはガラスを含む絶縁材料を効率的な導体に変える方法を開発し、量子コンピュータの発展に寄与する可能性があります。この実験では、原子スケールで材料に適切な歪みを加え、特定の材料の原子構造を変化させる特殊な装置を使用しました。研究者たちは、これが将来の量子デバイスの基礎となり、効果的な量子コンピュータの実現に寄与することを期待しています。
＜関連情報＞
- https://news.uci.edu/2024/01/31/uc-irvine-scientists-make-breakthrough-in-quantum-materials-research/
- https://www.nature.com/articles/s41467-023-44547-7
HfTe5における制御可能な歪み駆動トポロジカル相転移と支配的な表面状態輸送 Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5
Jinyu Liu,Yinong Zhou,Sebastian Yepez Rodriguez,Matthew A. Delmont,Robert A. Welser,Triet Ho,Nicholas Sirica,Kaleb McClure,Paolo Vilmercati,Joseph W. Ziller,Norman Mannella,Javier D. Sanchez-Yamagishi,Michael T. Pettes,Ruqian Wu & Luis A. Jauregui
Nature Communications Published:06 January 2024
DOI:https://doi.org/10.1038/s41467-023-44547-7
Abstract
The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.
