2026-01-21 東京大学
MoS2単結晶ウエハーとデバイス群
＜関連情報＞
- https://www.t.u-tokyo.ac.jp/press/pr2026-01-21-001
- https://www.t.u-tokyo.ac.jp/hubfs/press-release/2026/0121/001/text.pdf
- https://www.nature.com/articles/s41467-026-68320-8
スケーラブルな2Dエレクトロニクスのための単層MoS₂の自己整合および自己制限ファンデルワールスエピタキシー Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
Yoshiki Sakuma,Keisuke Atsumi,Takanobu Hiroto,Jun Nara,Akihiro Ohtake,Yuki Ono,Takashi Matsumoto,Yukihiro Muta,Kai Takeda,Emi Kano,Toshiki Yasuno,Xu Yang,Nobuyuki Ikarashi,Asato Suzuki,Michio Ikezawa,Shuhong Li,Tomonori Nishimura,Kaito Kanahashi & Kosuke Nagashio
Nature Communications Published:21 January 2026
DOI:https://doi.org/10.1038/s41467-026-68320-8
Abstract
Unidirectional nucleation followed by seamless stitching has emerged as a promising strategy for the scalable epitaxial growth of single-crystalline monolayer transition metal dichalcogenides on sapphire substrates, which holds potential for post-silicon electronics. In contrast, here we present a different growth mechanism for single-crystalline MoS2 on c-plane sapphire via metal-organic chemical vapor deposition (MOCVD). We show that the initial nucleation generates not only 0° and antiparallel 60° domains but also low-angle twisted domains, consistent with the coincidence site lattice framework. However, these rotationally misoriented domains are observed to deterministically self-align and merge into energetically preferred 0° domain during coalescence, yielding a continuous, unidirectional single-crystal. Additionally, by employing MoO2Cl2 as a molybdenum precursor, we demonstrate that the growth of MoS2 occurs in a self-limiting manner. This epitaxial strategy is substantiated by a carrier mobility of 66 cm2/Vs at room temperature and 749 cm2/Vs at low temperatures. Our approach offers a practical and reproducible scheme for MOCVD-based van der Waals epitaxy for 2D electronics.
