ボロンヒ素の熱伝導性に関する画期的発見(UH Researchers Help Break Thermal Conductivity Barrier with Boron Arsenide Discovery)

2025-10-21 ヒューストン大学(UH)

ヒューストン大学とUCサンタバーバラ、ボストンカレッジの共同研究チームは、ホウ素ヒ化物(BAs)の熱伝導率がダイヤモンドを上回る可能性を発見した。純度を高めたBAs結晶では室温で2,100W/mK超を記録し、従来理論(1,360W/mK上限)を覆す成果を示した。BAsは高熱伝導と高電子移動度、広いバンドギャップを兼ね備え、半導体材料としても優秀で、スマートフォンやデータセンターの放熱効率向上が期待される。研究は米国立科学財団(NSF)の280万ドル支援の一環で、今後さらに高性能材料開発を進める予定。

<関連情報>

室温での硼素ヒ素の熱伝導率は2100W/メートル/ケルビン以上 Thermal conductivity of boron arsenide above 2100 W per meter per Kelvin at room temperature

Ange Benise Niyikiza, Zeyu Xiang, Fanghao Zhang, Fengjiao Pan, Chunhua Lic, Matthew Delmontb, David Broido, Ying Peng, Bolin Liao, Zhifeng Ren
Materials Today  Available online: 10 October 2025
DOI:https://doi.org/10.1016/j.mattod.2025.09.021

Graphical abstract

ボロンヒ素の熱伝導性に関する画期的発見(UH Researchers Help Break Thermal Conductivity Barrier with Boron Arsenide Discovery)

Abstract

Boron arsenide (BAs) single crystals had been previously reported to have thermal conductivity of 1500 W/m·K at room temperature. Now we achieved thermal conductivity above 2100 W/m·K at room temperature in BAs crystals due to lower concentration of impurities grown from purified arsenic, as evidenced by contrasting Raman spectra at sample regions with high and low thermal conductivities. We also observed a T−1.8 dependence of the thermal conductivity, suggesting a more significant contribution from four-phonon scatterings than suggested by previous theory. We found that our experimental result can be fit with a modified theoretical calculation by tuning down the three-phonon scattering for phonons in the 4–8 THz range, although current phonon transport theory cannot provide a physical explanation. Such an advance will not only attract more effort on growing BAs single crystals and studying their practical applications but also stimulate theoretical work to predict more materials with possibly even higher thermal conductivities.

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