2024-11-07 ミネソタ大学
<関連情報>
- https://cse.umn.edu/college/news/new-material-make-next-generation-electronics-faster-and-more-efficient
- https://www.science.org/doi/10.1126/sciadv.adq7892
ヘテロ構造設計による深紫外透明導電性SrSnO3 Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design
Fengdeng Liu, Zhifei Yang, David Abramovitch, Silu Guo, […], and Bharat Jalan
Science Advances Published:1 Nov 2024
DOI:https://doi.org/10.1126/sciadv.adq7892
Abstract
Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO3. This led to a modulation of carrier density from 1018 to 1020 cm−3, with room temperature mobilities ranging from 40 to 140 cm2 V−1 s−1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.