小型マイクロチップ開発のための新材料(New Methods for Smaller Microchips)

2025-09-12 ジョンズ・ホプキンス大学

ジョンズ・ホプキンス大学の研究チームは、これまで半導体製造に使われていなかった金属有機材料をシリコンウエハーにコーティングし、高度なレーザーを用いて化学反応を誘発する新手法を開発した。これにより、肉眼では見えないほど微細な回路パターンを経済的かつ高精度に形成できる。従来のレジスト材料は高出力放射線に十分反応せず微細化に限界があったが、この新材料はその課題を克服。研究成果は「Nature Chemical Engineering」に発表され、より小型・高速・低コストなマイクロチップ開発に道を開くとされる。応用先はスマートフォンから車、航空機まで幅広い。

小型マイクロチップ開発のための新材料(New Methods for Smaller Microchips)
A silicon wafer coated with a radiation-sensitive material
Image credit: Xinpei Zhou

<関連情報>

リソグラフィ応用に向けた非晶質ゼオライトイミダゾレート骨格薄膜のスピンオン成膜法 Spin-on deposition of amorphous zeolitic imidazolate framework films for lithography applications

Yurun Miao,Shunyi Zheng,Kayley E. Waltz,Mueed Ahmad,Xinpei Zhou,Yegui Zhou,Heting Wang,J. Anibal Boscoboinik,Qi Liu,Kumar Varoon Agrawal,Oleg Kostko,Liwei Zhuang & Michael Tsapatsis
Nature Chemical Engineering  Published:11 September 2025
DOI:https://doi.org/10.1038/s44286-025-00273-z

Abstract

Amorphous zeolitic imidazolate framework (aZIF) films have been recently introduced as resists for electron beam and extreme ultraviolet lithography. aZIFs are also being considered for separation applications, including thin film membranes. However, the reported methods for aZIF deposition are currently based on highly empirical trial-and-error approaches that hinder control of film composition, thickness and uniformity as well as scale-up and transferability to different coating geometries. This work presents a method for depositing aZIF films with controllable thickness using dilute precursors mixed immediately before encountering the substrate. Importantly, the method is amenable to quantitative analysis by computational fluid dynamics to extract intrinsic deposition rates and limiting reactant transport diffusivities, enabling predictive physics-based modeling of the deposition process. This allows the deposition method to be adapted for spin coating on silicon wafers to prepare high-quality aZIF films with consistently controlled thickness. Using this approach, high-resolution resist performance and wafer-scale use for beyond extreme-ultraviolet lithography of aZIF films is demonstrated.

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