PKUのドープ研究がより強力な半導体と電子機器への扉を開く(‘Dope’ PKU research opens door to more powerful semiconductors and electronic devices)

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2025-05-29 北京大学(PKU)

PKUのドープ研究がより強力な半導体と電子機器への扉を開く(‘Dope’ PKU research opens door to more powerful semiconductors and electronic devices)
Light-triggered doping of organic semiconductors. (a) Light-triggered doping mechanism and designed dopants. (b) Organic semiconductors. (c) Schematics of the light-triggered regionally controlled doping method.

北京大学の裴健教授率いる研究チームは、有機半導体のn型ドーピングを光で高精度に制御する新手法を開発し、2025年5月28日付の『Nature』誌に成果を発表しました。この手法は、光照射で活性化する新規ドーパント「iPADs」を用い、従来の化学ドーピングでは困難だったサブミクロンレベルの領域制御を実現。これにより、電気伝導度が30 S/cmを超える高性能な有機集積回路の製造が可能となり、次世代の有機エレクトロニクス技術の発展に寄与します。この研究は、中国国家自然科学基金や北京大学分子材料・ナノファブリケーション研究室などの支援を受けて行われました。

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有機半導体の光トリガーによる領域制御nドーピング Light-triggered regionally controlled n-doping of organic semiconductors

Xin-Yi Wang,Yi-Fan Ding,Xiao-Yan Zhang,Yang-Yang Zhou,Chen-Kai Pan,Yuan-He Li,Nai-Fu Liu,Ze-Fan Yao,Yong-Shi Chen,Zhi-Hao Xie,Yi-Fan Huang,Yu-Chun Xu,Hao-Tian Wu,Chun-Xi Huang,Miao Xiong,Li Ding,Zi-Di Yu,Qi-Yi Li,Yu-Qing Zheng,Jie-Yu Wang & Jian Pei
Nature  Published:28 May 2025
DOI:https://doi.org/10.1038/s41586-025-09075-y

Abstract

Doping is a primary method to modulate the electrical properties of semiconductors, enabling the fabrication of various homojunctions/heterojunctions and complex devices1,2,3,4,5,6,7,8. For organic semiconductors (OSCs), the electrical performance has been extensively improved by developing doping methods and dopants9,10,11,12,13. However, compared with the state-of-the-art spatial resolution of inorganic semiconductor fabrication processes, OSCs lag far behind, limiting the construction of complex organic electronic devices5. Here we present a facile light-triggered doping strategy and develop a series of inactive photoactivable dopants (iPADs) for regionally controlled n-doping of OSCs. By converting iPADs into active dopants through ultraviolet (UV) exposure, controllable doping of various n-type OSCs with high electrical conductivity greater than 30 S cm−1 has been realized. Using iPADs can substantially improve the performances of OSCs in transistors, logic circuits and thermoelectrics. Also, regionally controlled doping is demonstrated in OSCs with a record resolution down to 1 μm. Overall, our strategy has achieved tunable doping levels in OSCs with high spatial resolution, which is expected to be highly suited for integrated circuits in both roll-to-roll and laboratory-scale environments.

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