2024-06-25 韓国基礎科学研究院(IBS)
＜関連情報＞
- https://www.ibs.re.kr/cop/bbs/BBSMSTR_000000000738/selectBoardArticle.do
- https://www.nature.com/articles/s41563-024-01931-y
高性能フレキシブル2次元・3次元エレクトロニクスのための応力工学を用いたダメージフリー・ドライ・トランスファー法 Damage-free dry transfer method using stress engineering for high-performance flexible two- and three-dimensional electronics
Yoonsoo Shin,Seungki Hong,Yong Chan Hur,Chanhyuk Lim,Kyungsik Do,Ji Hoon Kim,Dae-Hyeong Kim & Sangkyu Lee
Nature Materials Published:21 June 2024
DOI:https://doi.org/10.1038/s41563-024-01931-y
Abstract
Advanced transfer printing technologies have enabled the fabrication of high-performance flexible and stretchable devices, revolutionizing many research fields including soft electronics, optoelectronics, bioelectronics and energy devices. Despite previous innovations, challenges remain, such as safety concerns due to toxic chemicals, the expensive equipment, film damage during the transfer process and difficulty in high-temperature processing. Thus a new transfer printing process is needed for the commercialization of high-performance soft electronic devices. Here we propose a damage-free dry transfer printing strategy based on stress control of the deposited thin films. First, stress-controlled metal bilayer films are deposited using direct current magnetron sputtering. Subsequently, mechanical bending is applied to facilitate the release of the metal bilayer by increasing the overall stress. Experimental and simulation studies elucidate the stress evolution mechanisms during the processes. By using this method, we successfully transfer metal thin films and high-temperature-treated oxide thin films onto flexible or stretchable substrates, enabling the fabrication of two-dimensional flexible electronic devices and three-dimensional multifunctional devices.
