2023-04-13 チャルマース工科大学
二次元磁気材料は、磁気センサーや高感度磁気センサー、データストレージおよびメモリ技術などの用途に適しており、持続可能な技術開発に貢献するものと期待されている。
この研究は、Advanced Materialsに掲載された。
＜関連情報＞
- https://news.cision.com/chalmers/r/breakthrough-in-magnetic-quantum-material-paves-way-for-ultra-fast-sustainable-computers,c3749723
- https://onlinelibrary.wiley.com/doi/10.1002/adma.202209113
ファンデルワールス強磁性体Fe5GeTe2/グラフェンヘテロ構造による室温スピンバルブの実現 A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe5GeTe2/Graphene Heterostructure
Bing Zhao, Roselle Ngaloy, Sukanya Ghosh, Soheil Ershadrad, Rahul Gupta, Khadiza Ali, Anamul Md. Hoque, Bogdan Karpiak, Dmitrii Khokhriakov, Craig Polley, Balasubramanian Thiagarajan, Alexei Kalaboukhov, Peter Svedlindh, Biplab Sanyal, Saroj P. Dash
Advanced Materials Published: 15 January 2023
DOI:https://doi.org/10.1002/adma.202209113
Abstract
The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe5GeTe2 in heterostructures with graphene is demonstrated. The room-temperature spintronic properties of Fe5GeTe2 are measured at the interface with graphene with a negative spin polarization. Lateral spin-valve and spin-precession measurements provide unique insights by probing the Fe5GeTe2/graphene interface spintronic properties via spin-dynamics measurements, revealing multidirectional spin polarization. Density functional theory calculations in conjunction with Monte Carlo simulations reveal significantly canted Fe magnetic moments in Fe5GeTe2 along with the presence of negative spin polarization at the Fe5GeTe2/graphene interface. These findings open opportunities for vdW interface design and applications of vdW-magnet-based spintronic devices at ambient temperatures.
