III-V半導体の電気光学特性を向上 (Boosting Electro-Optic Performance in III-V Semiconductors)

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2025-03-11 カリフォルニア大学サンタバーバラ校 (UCSB)

III-V半導体の電気光学特性を向上 (Boosting Electro-Optic Performance in III-V Semiconductors)
Photo Credit Haochen Wang, ChuanNan Li, Van de Walle group Concept illustration of the electro-optic response in AlScN
カリフォルニア大学サンタバーバラ校(UCSB)の研究チームは、III-V族半導体材料であるアルミニウムスカンジウム窒化物(AlScN)の電気光学性能を向上させる方法を発見しました。電気光学効果は、光通信や量子情報科学で重要ですが、従来のリチウムニオベートはシリコンとの統合が難しい課題がありました。本研究では、スカンジウム原子の配置を制御し、スーパーラティス構造を活用することで、AlScNの電気光学性能を最大10倍向上できる可能性を示しました。この成果は、次世代フォトニクスデバイスの開発に貢献すると期待されています。

<関連情報>

AlScNの電気光学応答性の向上に向けて
Towards higher electro-optic response in AlScN

Haochen Wang;Sai Mu;Chris G. Van de Walle
Applied Physics Letters  Published:January 27 2025
DOI:https://doi.org/10.1063/5.0244434

Novel materials with large electro-optic (EO) coefficients are essential for developing ultra-compact broadband modulators and enabling effective quantum transduction. Compared to lithium niobate, the most widely used nonlinear optical material, wurtzite AlScN, offers advantages in nano-photonic devices due to its compatibility with integrated circuits. We perform detailed first-principles calculations to investigate the electro-optic effect in Al1−xScxN alloys and superlattices. At elevated Sc concentrations in alloys, the EO coefficients increase; importantly, we find that cation ordering along the c axis leads to enhanced EO response. Strain engineering can be used to further manipulate the EO coefficients of AlScN films. With applied in-plane strains, the piezoelectric contributions to the EO coefficients increase dramatically, even exceeding 250 pm/V. We also explore the possibility of EO enhancement through superlattice engineering, finding that nonpolar a-plane (AlN)m/(ScN)n superlattices increase EO coefficients beyond 40 pm/V. Our findings provide design principles to enhance the electro-optic effect through alloy engineering and heterostructure architecture.

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