トンネル酸化膜パッシベーティング接触型太陽電池で産業記録効率を達成(Scientists Achieve Record Efficiency in Industrial Tunnel Oxide Passivating Contact Solar Cells)

2026-02-25 中国科学院(CAS)

中国科学院寧波材料技術工程研究所(NIMTE)の葉吉春教授らは、産業用トンネル酸化膜パッシベーションコンタクト(TOPCon)型シリコン太陽電池で変換効率26.66%の世界最高記録を達成した。M10大面積ウエハー(313.3cm²)を用い、前面では高シート抵抗ボロンエミッタと最適化電極設計により再結合損失を低減。背面では二層トンネル酸化膜/ポリシリコン構造を開発し、銀拡散を抑制して界面特性を向上させた。さらにポリシリコン層の薄膜化で両面受光率88.3%を実現。開放電圧744.6mV、FF85.57%に到達し、理論限界の83.8%に迫った。成果は『Nature Energy』掲載。

トンネル酸化膜パッシベーティング接触型太陽電池で産業記録効率を達成(Scientists Achieve Record Efficiency in Industrial Tunnel Oxide Passivating Contact Solar Cells)
Industrial TOPCon solar cells achieved a record-high efficiency. (Image by NIMTE)

<関連情報>

両面電気改良により、効率的な産業用トンネル酸化物パッシベーションコンタクトシリコン太陽電池が実現 Dual-side electrical refinement enables efficient industrial tunnel oxide passivating contact silicon solar cells

Zhenhai Yang,Sheshicheng Chen,Jie Mao,Kun Cao,Zunke Liu,Haojiang Du,Zhao Wang,Yuanfang Zhang,Jinjin Chen,Jiajia Zhu,Menglei Xu,Wenqi Li,Hao Jin,Xinyu Zhang,Huiwei Du,Jie Yang,Peiting Zheng,Yuheng Zeng & Jichun Ye
Nature Energy  Published:24 February 2026
DOI:https://doi.org/10.1038/s41560-026-01982-2

Abstract

Crystalline silicon solar cells continue to dominate the photovoltaic industry, with tunnel oxide passivating contact (TOPCon) technology emerging as a prominent candidate. However, the efficiency of industrial-scale TOPCon solar cells remains limited by their suboptimal electrical performance, falling short of the Auger limit. Here we propose a dual-sided synergistic strategy that achieves a certified efficiency of 26.66% for industrial-scale TOPCon cells on M10-size wafers. The implementation of a front-side high-sheet-resistance boron emitter improves the passivation quality, and an optimized grid design reduces carrier transport losses. A rear-side double-layer tunnel oxide silicon/polysilicon structure suppresses silver-induced degradation by preventing silver diffusion from the electrodes into the silicon substrate, thereby maintaining excellent interfacial passivation. Moreover, the high crystallinity of the inner polysilicon layer, along with a lower concentration of inactive phosphorus dopants in the silicon substrate, leads to superior passivation performance. Rear-side localized thinning of the polysilicon layer also improves the bifaciality to 88.3%.

0402電気応用
ad
ad
Follow
ad
タイトルとURLをコピーしました