2025-01-19 中国科学院（CAS）
Microstructure of AlN and SATO thin films. (a, b) Bright-field transmission electron microscopy (TEM) image and selected area electron diffraction (SAED) pattern of the AlN/STO cross-sectional sample. (c, d) Bright-field TEM image and SAED pattern of the SATO/STO cross-sectional sample. No obvious ferroelectric domain walls were observed in the SATO thin film, indicating its single-domain characteristic. Scale bars: 20 nm. (Image by IMR)
＜関連情報＞
- https://english.cas.cn/newsroom/research_news/tech/202601/t20260123_1146493.shtml
- https://www.nature.com/articles/s41467-025-68069-6
超高速応答速度を有する強誘電体紫外線光検出器材料 Ferroelectric ultraviolet photodetector material with ultrafast response speed
Xuexi Yan,Tingting Yan,Lingli Li,Yi Cao,Xinwei Wang,Jinghui Wang,Ang Tao,Tingting Yao,Yixiao Jiang,Weijin Hu,Xiaosheng Fang,Hengqiang Ye,Xiu-Liang Ma & Chunlin Chen
Nature Communications Published:30 December 2025
DOI:https://doi.org/10.1038/s41467-025-68069-6
We are providing an unedited version of this manuscript to give early access to its findings. Before final publication, the manuscript will undergo further editing. Please note there may be errors present which affect the content, and all legal disclaimers apply.
Abstract
Ferroelectric films are promising to be used for high-performance photodetectors due to their intrinsic electric fields and high dielectric constants. However, the presence of high-density domains with varying polarization directions can severely degrade comprehensive performance. Here, we fabricate high-quality SrAl11-δTiO19 (SATO) ferroelectric films through a solid-state reaction. The SATO film possesses a magnetoplumbite-type structure with polarization along the c-axis and exhibits the possibility of single-domain ferroelectrics. Ferroelectric performance tests show that the remnant polarization of SATO film reaches 7.8 μC/cm2 and the polarization retention exceeds 500 hours. Optoelectronic performance measurements reveal that the SATO photodetector exhibits excellent performance with response wavelength of 330 nm, responsivity of 860 mA/W, detectivity of 1.63 × 1013 Jones, switching ratio of 1.9 × 104, and ultrafast rise/fall response speed of 6.8 ns/17.7 ns (i.e., nearly 10000 times faster than traditional photodetectors). The outstanding properties highlight SATO as an outstanding candidate for next-generation photodetectors.
