次世代エレクトロニクスをより速く、より効率的にする新素材(New material to make next generation of electronics faster and more efficient)

2024-11-07 ミネソタ大学

＜関連情報＞

• https://cse.umn.edu/college/news/new-material-make-next-generation-electronics-faster-and-more-efficient
• https://www.science.org/doi/10.1126/sciadv.adq7892

ヘテロ構造設計による深紫外透明導電性SrSnO3 Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design

Fengdeng Liu, Zhifei Yang, David Abramovitch, Silu Guo, […], and Bharat Jalan
Science Advances  Published:1 Nov 2024
DOI:https://doi.org/10.1126/sciadv.adq7892

Abstract

Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO₃/La:SrSnO₃/GdScO₃ (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO₃ from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO₃. This led to a modulation of carrier density from 10¹⁸ to 10²⁰ cm⁻³, with room temperature mobilities ranging from 40 to 140 cm² V⁻¹ s⁻¹. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.