2023-07-13 ミネソタ大学
◆研究者たちは、特許取得済みの製造プロセスを使用して、実用化が容易な方法でこの材料を作成しました。これにより、電子デバイスのエネルギー消費を大幅に削減しながら、同等またはさらに優れた性能を実現することができます。研究チームは、これにより電子機器の熱管理やエネルギー効率向上に向けた重要な一歩を踏み出したと述べています。
＜関連情報＞
- https://cse.umn.edu/college/news/new-material-could-hold-key-reducing-energy-consumption-computers-and-electronics
- https://www.nature.com/articles/s41467-023-39408-2
スパッタされたPt3SnおよびPt3SnxFe1-xトポロジカル半金属における頑強な負の縦磁気抵抗とスピン軌道トルク Robust negative longitudinal magnetoresistance and spin–orbit torque in sputtered Pt3Sn and Pt3SnxFe1-x topological semimetal
Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Wojciech Swatek,K. Andre Mkhoyan,Tony Low & Jian-Ping Wang
Nature Communications Published:12 July 2023
DOI:https://doi.org/10.1038/s41467-023-39408-2
Abstract
Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices.
