実用化の壁を超えるスピン力学センサーの誕生~高感度・高耐久を両立する新しいフィルム型ひずみゲージ~

2026-02-17 大阪大学

大阪大学産業科学研究所の千葉大地教授らは、磁気トンネル接合(MTJ)をフレキシブル基材上に形成した「スピン力学センサ」で、10万回超の引っ張り試験後も特性劣化がないことを世界で初めて実証した。従来の金属箔ひずみゲージの約500倍の高感度を維持しつつ、1%以上の繰り返しひずみ下でも抵抗値や応答特性は安定。高感度・低消費電力・低電圧駆動に加え高耐久性を両立し、実使用環境での長期動作可能性を示した。既存のCo-Fe-B/MgO系MTJ技術を活用でき量産にも有利で、医療やインフラ監視など次世代センシング基盤への展開が期待される。成果は「APL Electronic Devices」に掲載。

実用化の壁を超えるスピン力学センサーの誕生~高感度・高耐久を両立する新しいフィルム型ひずみゲージ~
図1 10万回の引っ張り試験の模式図(上)と結果(下)

<関連情報>

10万サイクル以上の耐久性を備えたフレキシブル磁気トンネル接合ベースのひずみセンサー
Flexible magnetic tunnel junction-based strain sensor with over 100 000-cycle endurance

Daichi Chiba ;Akiko Imai;Akira Ando
APL Electronic Devices  Published:February 17 2026
DOI:https://doi.org/10.1063/5.0293081

We report a flexible mechanical sensor based on a magnetic tunnel junction (MTJ) with a CoFeB/MgO/CoFeB structure integrated on a polyimide substrate. The device exhibits a clear magnetoresistance response to uniaxial tensile strain and maintains its sensing performance under high-cycle mechanical loading. To demonstrate this durability, we utilized a custom-developed system to apply over 100 000 repetitive tensile strain cycles with up to 1.25% strain. Throughout the test, the MTJ maintained its zero-strain resistance and strain-resistance characteristics without significant degradation or delamination. Structural analysis revealed partial oxidation within the bottom Ta layer and suggested that the relatively thick bottom electrode stack (Ta/Ru/Ta) functions as a strain buffer layer. These features are considered contributing factors to the observed high durability, although the robustness is likely rooted in the intrinsic properties of the nanoscale thin film. This study provides direct experimental evidence that MTJ-based mechanical sensors can offer both high sensitivity and exceptional endurance, demonstrating their potential as practical strain sensors in flexible and deformable systems for next-generation, high-performance physical sensing.

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