2025-08-08 イェール大学
＜関連情報＞
- https://engineering.yale.edu/news-and-events/news/yale-engineers-develop-breakthrough-method-practical-nanowire-materials
- https://www.cell.com/matter/abstract/S2590-2385(25)00171-7
熱機械的エピタキシーによる一次元単結晶トポロジカルナノ材料の実現 Realizing one-dimensional single-crystalline topological nanomaterials through thermomechanical epitaxy
Naijia Liu ∙ Yi-Xiang Yang ∙ Cai Lu ∙ … ∙ Miguel B. Costa ∙ Ze Liu ∙ Jan Schroers
Matter Published:April 24, 2025
DOI:https://doi.org/10.1016/j.matt.2025.102128
Graphical abstract
Progress and potential
One-dimensional (1D) topological nanomaterials hold great promise for applications in quantum and electronic devices, but their fabrication has been constrained by material limitations and scalability challenges. This study demonstrates a general method for producing high-quality, single-crystalline topological nanowires using thermomechanical epitaxy (TME), a pressure-driven diffusional growth process. TME enables wafer-scale synthesis of nanowires across a broad range of topological phases, including materials that have not previously been achieved in 1D form. Beyond experimental realization, we establish a theoretical framework that predicts material suitability for TME by correlating phase stability with pressure-induced chemical potential. This predictive capability provides a systematic approach to identifying new candidates for 1D topological nanomaterials. By broadening the accessible material space and offering precise geometric control, this work advances both the fundamental understanding and practical deployment of topological nanomaterials in next-generation technologies.
Highlights
- TME enables wafer-scale growth of diverse topological nanowires
- A pressure-driven diffusion process drives controlled nanowire formation
- Theoretical framework predicts material compatibility with TME
- TME provides a scalable and versatile method for 1D nanomaterial synthesis
Summary
Applications and characterizations of topological materials benefit from nanostructures where enhanced surface-to-volume ratios amplify topological states. However, realizing one-dimensional topological nanomaterials has been limited by existing fabrication methods. Here, we present thermomechanical epitaxy (TME)—a general technique for fabricating one-dimensional topological nanomaterials. By applying pressure on bulk topological materials against rigid nanocavities, interface diffusion drives epitaxial growth of high-quality, single-crystalline nanowires at wafer scale. As this diffusional mechanism is prevalent across general materials, it enables a versatile approach to realize one-dimensional nanomaterials from a diverse spectrum of topological phases covering topological insulators and topological semimetals and realize one-dimensional nanomaterials that have not been achieved with state-of-the-art technology. Our theoretical framework predicts materials suitable for TME by correlating phase stability with pressure-induced chemical potential. The proposed method expands the accessible space of topological nanomaterials and bolsters the potential for advancements in physical science and next-generation nanodevices.
