ナノ製造技術の進展が暗視技術を革新(Nanomanufacturing Breakthrough Could Revolutionize Night Vision Technology, Other Fields)

2025-08-18 レンセラー工科大学(RPI)

RPIの研究チームは、極薄結晶薄膜を効率的に製造する新手法「原子リフトオフ」を開発し、赤外線検出技術を大きく前進させた。従来は成長基板から脆い薄膜を剥離することが難しかったが、鉛(Pb)含有材料を利用して界面結合を弱め、リリース層を使わずに厚さ10nmの高感度PMN-PT膜を作製することに成功。冷却を必要としない赤外線検出デバイスが可能になり、従来型より軽量・低コストで高性能なセンサーの実用化が期待される。応用分野はナイトビジョン、生体医療イメージング、天文観測、自動運転など多岐にわたる。成果はMITなどとの共同研究によるものである。

ナノ製造技術の進展が暗視技術を革新(Nanomanufacturing Breakthrough Could Revolutionize Night Vision Technology, Other Fields)
The new technique to manufacture ultra-thin semiconducting membranes could lead to a breakthrough in night vision technology (Getty Images)

<関連情報>

冷却不要の赤外線検出のためのエピタキシャル膜の原子レベルでの剥離 Atomic lift-off of epitaxial membranes for cooling-free infrared detection

Xinyuan Zhang,Owen Ericksen,Sangho Lee,Marx Akl,Min-Kyu Song,Haihui Lan,Pratap Pal,Jun Min Suh,Shane Lindemann,Jung-El Ryu,Yanjie Shao,Xudong Zheng,Ne Myo Han,Bikram Bhatia,Hyunseok Kim,Hyun S. Kum,Celesta S. Chang,Yunfeng Shi,Chang-Beom Eom & Jeehwan Kim
Nature  Published:23 April 2025
DOI:https://doi.org/10.1038/s41586-025-08874-7

Abstract

Recent breakthroughs in ultrathin, single-crystalline, freestanding complex oxide systems have sparked industry interest in their potential for next-generation commercial devices1,2. However, the mass production of these ultrathin complex oxide membranes has been hindered by the challenging requirement of inserting an artificial release layer between the epilayers and substrates3,4. Here we introduce a technique that achieves atomic precision lift-off of ultrathin membranes without artificial release layers to facilitate the high-throughput production of scalable, ultrathin, freestanding perovskite systems. Leveraging both theoretical insights and empirical evidence, we have identified the pivotal role of lead in weakening the interface. This insight has led to the creation of a universal exfoliation strategy that enables the production of diverse ultrathin perovskite membranes less than 10 nm. Our pyroelectric membranes demonstrate a record-high pyroelectric coefficient of 1.76 × 10−2 C m2 K−1, attributed to their exceptionally low thickness and freestanding nature. Moreover, this method offers an approach to manufacturing cooling-free detectors that can cover the full far-infrared spectrum, marking a notable advancement in detector technology5.

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