常温環境下で動作するペタヘルツフォトトランジスタの開発(U of A Researchers Developing World’s First Petahertz-Speed Phototransistor in Ambient Conditions)

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2025-05-19 アリゾナ大学

アリゾナ大学の研究チームは、常温・常圧下で動作する世界初のペタヘルツ速度フォトトランジスタを開発した。デバイスはグラフェンと特殊なシリコン層を組み合わせ、638アト秒のレーザーパルスを用いた光誘起トンネル効果により、超高速スイッチングを実現。既存トランジスタの約100万倍の速度で動作可能で、光コンピューティングや量子情報処理への応用が期待されている。実用化への道も視野に入る革新的成果。

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グラフェンにおける光誘起量子トンネル電流 Light-induced quantum tunnelling current in graphene

Mohamed Sennary,Jalil Shah,Mingrui Yuan,Ahmed Mahjoub,Vladimir Pervak,Nikolay V. Golubev & Mohammed Th. Hassan
Nature Communications  Published:09 May 2025
DOI:https://doi.org/10.1038/s41467-025-59675-5

常温環境下で動作するペタヘルツフォトトランジスタの開発(U of A Researchers Developing World’s First Petahertz-Speed Phototransistor in Ambient Conditions)

Abstract

In the last decade, advancements in attosecond spectroscopy have allowed researchers to study and manipulate electron dynamics in condensed matter via ultrafast light fields, offering the possibility to realise ultrafast optoelectronic devices. Here, we report the generation of light-induced quantum tunnelling currents in graphene phototransistors by ultrafast laser pulses in an ambient environment. This tunnelling effect provides access to an instantaneous field-driven current, demonstrating a current switching effect (ON and OFF) on a ~630 attosecond scale (~1.6 petahertz speed). We show the tunability of the tunnelling current and enhancement of the graphene phototransistor conductivity by controlling the density of the photoexcited charge carriers at different pump laser powers. We exploited this capability to demonstrate various logic gates. The reported approach under ambient conditions is suitable for the development of petahertz optical transistors, lightwave electronics, and optical quantum computers.

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