圧電素子内蔵の高品質ナノメカニカル共振器(High-quality nanomechanical resonators with built-in piezoelectricity)

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2024-11-05 チャルマース工科大学

スウェーデンのチャルマース工科大学とドイツのマクデブルク大学の研究者は、高い機械的品質と圧電性を兼ね備えた新しいナノメカニカル共振器を開発しました。この共振器は、引張応力を持つ窒化アルミニウム(AlN)を用いており、機械的品質係数が1,000万を超える性能を達成しています。圧電材料であるAlNは、機械的運動を電気信号に変換できるため、量子センシングや量子トランスデューサーなどの応用が期待されます。研究チームは、さらに品質係数の向上と、圧電性を活用した量子センシングへの応用を目指しています。

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量子オプトエレクトロメカニクスのための高品質なナノメカニカル結晶AlN共振器 Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics

Anastasiia Ciers, Alexander Jung, Joachim Ciers, Laurentius Radit Nindito, Hannes Pfeifer, Armin Dadgar, André Strittmatter, Witlef Wieczorek
Advanced Materials  Published: 17 September 2024
DOI:https://doi.org/10.1002/adma.202403155

圧電素子内蔵の高品質ナノメカニカル共振器(High-quality nanomechanical resonators with built-in piezoelectricity)

Abstract

High-quality factor (Qm) mechanical resonators are crucial for applications where low noise and long coherence time are required, as mirror suspensions, quantum cavity optomechanical devices, or nanomechanical sensors. Tensile strain in the material enables the use of dissipation dilution and strain engineering techniques, which increase the mechanical quality factor. These techniques have been employed for high-Qm mechanical resonators made from amorphous materials and, recently, from crystalline materials such as InGaP, SiC, and Si. A strained crystalline film exhibiting substantial piezoelectricity expands the capability of high-Qm nanomechanical resonators to directly utilize electronic degrees of freedom. In this work, nanomechanical resonators with Qm up to 2.9 × 107 made from tensile-strained 290 nm-thick AlN are realized. AlN is an epitaxially-grown crystalline material offering strong piezoelectricity. Nanomechanical resonators that exploit dissipation dilution and strain engineering to reach a Qm × fm-product approaching 1013 Hz at room temperature are demonstrated. A novel resonator geometry is realized, triangline, whose shape follows the Al–N bonds and offers a central pad patterned with a photonic crystal. This allows to reach an optical reflectivity above 80% for efficient coupling to out-of-plane light. The presented results pave the way for quantum optoelectromechanical devices at room temperature based on tensile-strained AlN.

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