2026-01-22 アルゴンヌ国立研究所（ANL）
Illustration showing two-dimensional molybdenum disulfide (yellow and blue spheres) stacked on diamond, a combination that helps electric current flow and could enable a new type of diamond-based electronics. (Image generated by ChatGPT 5.)
＜関連情報＞
- https://www.anl.gov/article/stacking-up-a-new-take-on-diamond-electronics
- https://pubs.acs.org/doi/10.1021/acs.nanolett.5c04059
室温で動作するPN接合のためのホウ素ドープp型ダイヤモンドと単層n型MoS2の異種集積 Heterogenous Integration of Boron-Doped p-Diamond with Monolayer n-MoS2 for PN Junctions Operating at Room Temperature
Akshay Wali,Roshan Padhan,Ralu Divan,Liliana Stan,Nihar Pradhan,and Anirudha V. Sumant
Nano Letters Published: October 3, 2025
DOI:https://doi.org/10.1021/acs.nanolett.5c04059
Abstract
Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS2) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (JD) of ∼4000 A/cm2, an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 106. We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. Our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.
